Please find all the papers published before joining UTA.

2025

[2] M. Muduli, N. Gajowski, Y Xia, S. Lee, S. Arafin, and S. Krishna, “Heterogeneous integration of InGaAs/GaAsSb superlattices with Si for e-SWIR sensors”, Proc. SPIE 13372, Optical Interconnects and Packaging 2025, 133720C (20 March 2025).

[1] N. S. Nallamothu, M. Muduli, Y. Xia, S. Lee, S. Arafin, S. Krishna, and R. M. Reano, “Heterogeneous integration of GaAsSb and silicon via direct wafer bonding for high-speed avalanche photodiodes”, Proc. SPIE 13372, Optical Interconnects and Packaging 2025, 133720B (20 March 2025).

2024

[4] Y. Liu, X. Jin, H. Jung, S. Lee, F. Harun, J. S. Ng, S. Krishna, and J. P. R. David, “Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes”, Appl. Phys. Lett. 125, 221107 (2024).

[3] M. Muduli, Y. Xia, S. Lee, N. Gajowski, C. Chae, S. Rajan, J. Hwang, S. Arafin, and S. Krishna, “Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes”, Appl. Phys. Lett. 125, 171103 (2024).

[2] H. Jung*, S. Lee*, X. Jin*, Y. Liu, T. J. Ronningen, C. H. Grein, J. P. R. David, and S. Krishna, “Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 µm Wavelength Detection”, Commun. Mater. 5, 219 (2024). *Authors contributed equally to this paper.

[1] H. N. Abbasi*, S. Lee*, H. Jung, N. Gajowski, Y. Li, Y. Wang, D. Kim, J. Zhou, J. Gong, C. Chae, J. Hwang, M. Muduli, S. Nookala, Z. Ma, and S. Krishna, “Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction”, Appl. Phys. Lett. 125, 101107 (2024). *Authors contributed equally to this paper.