Please find all the papers published before joining UTA.
2025
[6] Y. Xia, S. S. S. Nikor, N. F. Gajowski, S. Lee, M. Muduli, S. Noh, S. N. Nallamothu, R. L. Adams, R. M. Reano, S. A. Ringel, S. Krishna, and S. Arafin. “Dual-Sacrificial-Layer Wet Etching for Transfer Printing of InP-Based Antimony-Containing Materials”, ECS Journal of Solid State Science and Technology (2025).
[5] R. L. Adams, H. Jung, N. Gajowski, S. Lee, S. Krishna, S. A. Ringel. “Defect spectroscopy of MBE-grown GaAs0.51Sb0.49 pin infrared detectors on InP substrates.” Appl. Phys. Lett. 127, 102102 (2025).
[4] S. Lee, H. Jung, S. Tempel, S. Krishna, & C. Grein (2025). Chapter Seven – Engineering of superlattice-based avalanche photodiodes. In S. D. Gunapala & D. Z. Ting (Eds.), Recent Developments in Type-II Superlattice Infrared Detectors: Vol. 118 (pp. 303–338). Elsevier.
[3] S. Mills, B. Bhardwaj, S. Lee, H. Jung, D. Kabra, and S. Krishna. “Carrier transport using temperature dependent measurements in antimony-based avalanche photodiodes.” Proceedings Volume 13469, Infrared Technology and Applications LI; 134690B (2025).
[2] M. Muduli, N. Gajowski, Y Xia, S. Lee, S. Arafin, and S. Krishna, “Heterogeneous integration of InGaAs/GaAsSb superlattices with Si for e-SWIR sensors”, Proc. SPIE 13372, Optical Interconnects and Packaging 2025, 133720C (20 March 2025).
[1] N. S. Nallamothu, M. Muduli, Y. Xia, S. Lee, S. Arafin, S. Krishna, and R. M. Reano, “Heterogeneous integration of GaAsSb and silicon via direct wafer bonding for high-speed avalanche photodiodes”, Proc. SPIE 13372, Optical Interconnects and Packaging 2025, 133720B (20 March 2025).
2024
[4] Y. Liu, X. Jin, H. Jung, S. Lee, F. Harun, J. S. Ng, S. Krishna, and J. P. R. David, “Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes”, Appl. Phys. Lett. 125, 221107 (2024).
[3] M. Muduli, Y. Xia, S. Lee, N. Gajowski, C. Chae, S. Rajan, J. Hwang, S. Arafin, and S. Krishna, “Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes”, Appl. Phys. Lett. 125, 171103 (2024).
[2] H. Jung*, S. Lee*, X. Jin*, Y. Liu, T. J. Ronningen, C. H. Grein, J. P. R. David, and S. Krishna, “Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 µm Wavelength Detection”, Commun. Mater. 5, 219 (2024). *Authors contributed equally to this paper.
[1] H. N. Abbasi*, S. Lee*, H. Jung, N. Gajowski, Y. Li, Y. Wang, D. Kim, J. Zhou, J. Gong, C. Chae, J. Hwang, M. Muduli, S. Nookala, Z. Ma, and S. Krishna, “Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction”, Appl. Phys. Lett. 125, 101107 (2024). *Authors contributed equally to this paper.